PHYSICAL AND ELECTRICAL PROPERTIES OF WIDELY USED AND PROMISING SEMICONDUCTOR MATERIALS

Authors

  • Niyazxonova B. E. BuxDU Fizika Kafedrasi Dotsenti
  • Abror Halimov BuxDU Fizika Kafedrasi Magistranti

Keywords:

silicon (Si), silicon carbide (SiC), gallium nitride (GaN), diamond, gallium oxide (Ga2O3), nitride aluminum (AlN), bor nitride (BN), power microelectronics.

Abstract

Modern and promising semiconductor materials (silicon (Si), silicon carbide (SiC), gallium nitride (GaN), diamond, gallium oxide (Ga2O3), aluminum nitride (AlN), bor nitride (BN) have been analyzed in literature in terms of import substitution and use of existing microelectronics products in the creation of new ones.

References

Demidov A.A., Rybalka S.B. Modern and Promising Semiconductor Materials for Microelectronics of the Next Decade (2020-2030)

Bondar, D. 2019. Semiconductor Microelectronics – 2018 Electronic Components. 1: 12- 17.

Лебедев А. А, Иванов П. А, Левинштейн М. Е, Мохов Е. Н, Нагалюк С. С, Анисимов А. Н, Баранов П. Г. 2019. Электроника на основе SiC (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН. УФН. 189: 803-848.

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Published

2024-01-28

Issue

Vol. 12 No. 1 (2024): GIIRJ

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.