PHYSICAL AND ELECTRICAL PROPERTIES OF WIDELY USED AND PROMISING SEMICONDUCTOR MATERIALS
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Abstract
Modern and promising semiconductor materials (silicon (Si), silicon carbide (SiC), gallium nitride (GaN), diamond, gallium oxide (Ga2O3), aluminum nitride (AlN), bor nitride (BN) have been analyzed in literature in terms of import substitution and use of existing microelectronics products in the creation of new ones.
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References
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